SiC & GaN Power Devices Market , delivering a must-read report for industry stakeholders wanting to understand the strategic landscape of this burgeoning sector. Reader will find an in-depth analysis of the market and how it will impact existing traditional markets, as well as insights into future development and opportunities across the globe.
MarketInsightsReports has announced the addition of the “Global SiC & GaN Power Devices Market Research Report 2020”. That report focuses on global major leading players with information such as company profiles, product picture and specification.
The Global SiC & GaN Power Devices market report follows SWOT (Strengths, Weaknesses, Opportunities, and Threats) Analysis with expected of 33.7% CAGR values during forecast period.
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Key Players:
Infineon, Efficient Power Conversion (EPC), Rohm, STMicro, Fuji, Mitsubishi, United Silicon Carbide Inc., Toshiba, GeneSic, Microchip Technology, GaN Systems, VisIC Technologies LTD, request free sample for complete list of companies.
The leading players of industry, their market share, product portfolio, company profiles are covered in this report. The competitive market scenario among players will help the industry aspirants in planning their strategies.
Summary
Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials. Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.
SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016. There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.
According to this study, over the next five years the SiC & GaN Power Devices market will register a 33.7% CAGR in terms of revenue, the global market size will reach $ 1822 million by 2025, from $ 569.9 million in 2019.
SiC & GaN Power Devices Market Segmentation by types, Applications and regions:
Market Segment by Type covers:
GaN
SiC
Others
Market Segmented by Applications:
Consumer Electronics
Automotive & Transportation
Industrial Use
Others
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Market Segment by Regions:
North America (the United States, Canada, and Mexico)
Europe (Germany, France, UK, Russia, and Italy)
Asia-Pacific (China, Japan, Korea, India, and Southeast Asia)
South America (Brazil, Argentina, Colombia, etc.)
These segments are thoroughly evaluated on an individual basis and a team of analysts has ensured to give a crystal clear idea about various lucrative segments of the industry. This detailed analysis using segmentation by providing precise results on industry-related markets.
Frequently Asked Questions about “SiC & GaN Power Devices market” :
- What will the SiC & GaN Power Devices market size/ forecast be in 2026?
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- What are the key market trends (Strength Weaknesses Opportunities Threats Analysis) driving the global SiC & GaN Power Devices market?
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- Which is the highest growing region or country for the SiC & GaN Power Devices market?
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